elektronische bauelemente stt8205s 6a, 20v, r ds(on) 28m ? n-channel enhancement mode power mosfet 09 -mar-2011 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. 8205s ????? ?? ? = date code rohs compliant product a suffix of ?-c? specifies halogen & lead-free description the stt8205s provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. the tsop-6 package is universally used for all commercial-industr ial surface mount applications. features ? low on-resistance ? capable of 2.5v gate drive ? low drive current marking code package information package mpq leadersize tsop-6 3k 7? inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 20 v gate-source voltage v gs 10 v v gs =4.5v, t a = 25c 6 continuous drain current 3 v gs =4.5v, t a = 70c i d 4.8 a pulsed drain current 1 i dm 20 a power dissipation p d 1.14 w maximum junction to ambient 3 r ja 110 c / w linear derating factor 0.01 w / c operating junction & stor age temperature range t j , t stg -55~150 c g g s s d d millimete r millimete r ref. min. max. ref. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d1.10 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50 tsop-6 b l f h c j d g k a e 1 23 4 5 6
elektronische bauelemente stt8205s 6a, 20v, r ds(on) 28m ? n-channel enhancement mode power mosfet 09 -mar-2011 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test condition static drain-source breakdown voltage bv dss 20 - - v v gs =0v, i d =250 a breakdown voltage temp. coefficient bv ds /t j - 0.03 - v / c reference to 25c, i d =1ma gate-threshold voltage v gs(th) 0.5 - 1.5 v v ds =v gs , i d =250 a forward transfer conductance g fs - 20 - s v ds =10v, i d =6a gate-body leakage i gss - - 100 na v gs =10v t j =25 c - - 1 a v ds =16v,v gs =0 zero gate voltage drain current t j =75 c i dss - - 25 a v ds =16v,v gs =0 - - 28 v gs =4.5v, i d =6a drain-source on-resistance 2 r ds(on) - - 38 m? v gs =2.5v, i d =5.2a total gate charge 2 q g - 23 - gate-source charge q gs - 4.5 - gate-drain (?miller?) charge q gd - 7 - nc i d =6a v ds =20v v gs =5v turn-on delay time 2 t d(on) - 30 - rise time t r - 70 - turn-off delay time t d(off) - 40 - fall time t f - 65 - ns v ds =10v i d =1a v gs =5v r g =6 ? r d =10 ? input capacitance c iss - 1035 - output capacitance c oss - 320 - reverse transfer capacitance c rss - 150 - pf v gs =0 v ds =20v f=1.0mhz source-drain diode forward on voltage 2 v ds - - 1.2 v i s =1.7a, v gs =0 notes: 1 pulse width limited by max. junction temperature. 2 pulse width Q 300us, duty cycle Q2%. 3 surface mounted on 1 in 2 copper pad of fr4 board; t Q 5 sec. 180c/w when mounted on min. copper pad.
elektronische bauelemente stt8205s 6a, 20v, r ds(on) 28m ? n-channel enhancement mode power mosfet 09 -mar-2011 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve
elektronische bauelemente stt8205s 6a, 20v, r ds(on) 28m ? n-channel enhancement mode power mosfet 09 -mar-2011 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve
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